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| 9 1 " 4 3 1 p x f s . 0 4 ' & 5 u n-channel power mos fet applications dmos structure ? notebook pcs low on-state resistance : 0.03 ? (max) ? cellular and portable phones ultra high-speed switching ? on - board power supplies sop - 8 package ? li - ion battery systems general description features the XP131A1330SR is a n-channel power mos fet with low on-state low on-state resistance : rds (on) = 0.03 ? ( vgs = 4.5v ) resistance and ultra high-speed switching characteristics. rds (on) = 0.04 ? ( vgs = 2.5v ) because high-speed switching is possible, the ic can be efficiently rds (on) = 0.07 ? ( vgs = 1.5v ) set thereby saving energy. ultra high-speed switching the small sop-8 package makes high density mounting possible. operational voltage : 1.5v high density mounting : sop - 8 pin configuration pin assignment pin number pin name 1 - 3 ssource g gate 5 - 8 d drain equivalent circuit absolute maximum ratings ta=25 o c symbol ratings units vdss 20 v vgss + 8 v id 8 a idp 30 a idr 8 a pd 2.5 w tch 150 o c tstg -55 to 150 o c n - channel mos fet ( 1 device built-in ) ( note ) : when implemented on a glass epoxy pcb storage temperature reverse drain current continuous channel power dissipation (note) channel temperature drain - source voltage gate - source voltage drain current (dc) drain current (pulse) function 4 parameter sop - 8 top view 7 6 5 1 2 3 4 8 d d s s s g d 7 6 5 1 2 3 4 8 d
9 1 " 4 3 1 p x f s . 0 4 ' & 5 u electrical characteristics dc characteristics ta=25 c parameter symbol conditions min typ max units drain cut-off current idss vds = 20 , vgs = 0v 10 a gate-source leakage current igss vgs = 8 , vds = 0v 1 a gate-source cut-off voltage vgs (off ) id = 1ma , vds = 10v 0.5 1.2 v drain-source on-state resistance id = 4a , vgs = 4.5v 0.025 0.03 ? ( note ) rds ( on ) id = 4a , vgs = 2.5v 0.03 0.04 ? id = 4a , vgs = 1.5v 0.045 0.07 ? forward transfer admittance ( note ) body drain diode forward voltage ( note ) : effective during pulse test. dynamic characteristics ta=25 c parameter symbol conditions min typ max units input capacitance ciss 950 pf output capacitance coss vds = 10v , vgs = 0v 430 pf feedback capacitance crss f = 1 mhz 180 pf switching characteristics ta=25 c parameter symbol conditions min typ max units turn-on delay time td ( on ) 15 ns rise time tr vgs = 5v , id = 4a 20 ns turn-off delay time td ( off ) vdd = 10v 80 ns fall time tf 15 ns thermal characteristics parameter symbol conditions min typ max units thermal resistance implement on a glass epoxy ( channel - surroundings ) resin pcb id = 4a , vds = 10v | yfs | s 22 c / w 50 rth ( ch - a ) vf if = 8a , vgs = 0v v 0.85 1.1 u 7 h t 7 7 7 7 7 7 7 7 e t 7 1 v m t f 5 f t u ? ? * e " " 7 h t 7 7 7 electrical characteristics drain/source voltage:vds (v) gate/source voltage:vgs (v) drain current vs. drain/source voltage drain current vs. gate/source voltage drain current:id (a) drain current:id (a) 1 v m t f 5 f t u 5 b ? drain/source on-state resistance:rds (on) ( ) drain/source on-state resistance vs. drain current drain/source on-state resistance vs. gate/source voltage drain/source on-state resistance:rds (on) ( ) gate/source voltage:vgs (v) drain current:id (a) 1 v m t f 5 f t u 5 b ? 1 v m t f 5 f t u 5 b ? 5 b ? 1 v m t f 5 f t u ambient temp. :topr ( ? ) 7 7 h t 7 * e " " " " 7 7 e t 7 * e n " gate/source cut-off voltage variance vs. ambient temperature drain/source on-state resistance vs. ambient temperature " " drain/source on-state resistance:rds (on) ( ) gate/source cut-off voltage variance :vgs(off) variance (v) ambient temp. :topr ( ? ) 9 1 " 4 3 1 p x f s . 0 4 ' & 5 u 7 h t 7 g . ) [ 5 b ? capacitance:c (pf) $ p t t $ j t t $ s t t u s u e p o u e p g g u g electrical characteristics 7 h t 7 7 e e 7 1 8 t e v u z? 5 b ? switching time vs. drain current drain/source voltage vs. capacitance drain/source voltage:vds (v) drain current:id (a) switching time:t (ns) 7 e t 7 * e " 5 b ? 7 7 7 standardized transition thermal resistance vs. pulse width pulse width:pw (s) standardized transition thermal resistance: s(t) 4 j o h m f 1 v m t f 3 u i d i b ? 8 * n q m f n f o u f e p o b h m b t t f q p y z 1 $ # gate charge:qg (nc) source/drain voltage:vsd (v) gate/source voltage vs. gate charge reverse drain current vs. source/drain voltage gate/source voltage:vgs (v) reverse drain current:idr (a) 7 h t 7 7 1 v m t f 5 f t u 5 b ? |
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